Antibonding ground states in crystal phase quantum dots

Phys. Rev. B 106, L041405 (2022)

This work shows that crystal-phase InP quantum dots can exhibit an unusual antibonding hole ground state, despite being defined within a single chemical material. It links this nonintuitive level ordering to the combined role of crystal-phase interfaces and weak strain neglected in simplified models.

Keywords: crystal-phase quantum dots

Main result: crystal-phase InP quantum dots may host an antibonding hole ground state, leaving a clear fingerprint in the excitonic spectrum. Even weak zinc-blende/wurtzite strain can qualitatively reshape the lowest hole states.

PDF: PhysRevB.106.L041405.pdf

DOI: 10.1103/PhysRevB.106.L041405

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