Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots (2013)

This work analyzes self-assembled quantum dots with atomistic theory, emphasizing strain, band mixing, and realistic many-body spectra. It addresses effects that are difficult to capture within simplified continuum descriptions.

Keywords: InAs/InP, self-assembled quantum dots

Main result: quantitative agreement for self-assembled quantum-dot spectra requires realistic strain and atomistic band-structure treatment. Small structural details can qualitatively influence the low-energy states.

PDF: JPhysCondMatt_0953-8984_25_46_465301.pdf

DOI: 10.1088/0953-8984/25/46/465301

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