Including strain in atomistic tight-binding Hamiltonians: An application to self-assembled InAs/GaAs and InAs/InP quantum dots

Phys. Rev. B 86, 115424 (2012)

This work analyzes self-assembled quantum dots with atomistic theory, emphasizing strain, band mixing, and realistic many-body spectra. It addresses effects that are difficult to capture within simplified continuum descriptions.

Keywords: InAs/InP, self-assembled quantum dots

Main result: quantitative agreement for self-assembled quantum-dot spectra requires realistic strain and atomistic band-structure treatment. Small structural details can qualitatively influence the low-energy states.

PDF: PhysRevB.86.115424.2012.pdf

DOI: 10.1103/PhysRevB.86.115424

Related topics