Band engineering in nanowires: Ab initio model of band edges modified by (111) biaxial strain in group IIIA-VA semiconductors

Phys. Rev. B 86, 085411 (2012)

This publication contributes to atomistic theory of semiconductor nanostructures and their electronic or optical properties. It emphasizes realistic material, structural, or many-body effects beyond simplified textbook models.

Keywords: nanowire quantum dots

Main result: realistic atomistic modeling is necessary to capture key electronic or optical features of these nanostructures.

PDF: PhysRevB.86.085411.2012.pdf

DOI: 10.1103/PhysRevB.86.085411