Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

This publication contributes to atomistic theory of semiconductor nanostructures and their electronic or optical properties. It emphasizes realistic material, structural, or many-body effects beyond simplified textbook models.

Keywords: InAs/InP

Main result: realistic atomistic modeling is necessary to capture key electronic or optical features of these nanostructures.

PDF: JourAppPhys.107.104315.2010.pdf

DOI: 10.1063/1.3406144